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Origin of incoherent magnetic switching behavior in CoCrPt-SiO_2 perpendicular magnetic recording media

机译:CoCrPt-SiO_2垂直磁记录介质中非相干磁开关行为的起源

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Magnetic switching behavior for CoCrPt-SiO_2 single layer media with oxygen contents (OCs) from 4% to 10% and recording layer thickness (t_(mag)) from 2 to 27 nm is investigated. Significant incoherent switching, caused by domain wall motion, and large activation volume are observed at t_(mag) ≤ 6 nm regardless of OC, consistent with nonuniform microstructure with less grain isolation at t_(mag) = 4 nm. These results support formation of a highly exchange-coupled thin magnetic layer on top of Ru interlayer, which can explain the large difference between angular dependence of H_(cr) predicted by the Stoner-Wohlfarth theory and the experimental values.
机译:研究了氧含量(OCs)为4%至10%,记录层厚度(t_(mag))为2至27 nm的CoCrPt-SiO_2单层介质的磁开关行为。在不考虑OC的情况下,在t_(mag)≤6 nm处观察到由畴壁运动引起的显着的非相干切换,并且激活量大,这与微观结构不均匀且t_(mag)= 4 nm处晶粒隔离较少的现象一致。这些结果支持在Ru中间层顶部形成高度交换耦合的薄磁性层,这可以解释Stoner-Wohlfarth理论预测的H_(cr)的角度依赖性与实验值之间的巨大差异。

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