Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing

摘要

Incorporation of tin (Sn) in substitutional sites in strained Si_(0.75)Ge_(0.25) was demonstrated by Sn implant and pulsed laser annealing. The surface of Si_(0.75)Ge_(0.25) was amorphized by Sn implant but was recrystallized after pulsed laser annealing. The crystalline Si_(1-x-y)Ge_xSn_y layer formed was studied by Rutherford backscattering spectrometry and Raman spectroscopy. A substitutionality up to 62% Sn and 80% Ge was obtained at an optimal laser power of 400 mJ cm~(-2) for five laser pulses. A compressive strain of -1.15% was also obtained due to Sn incorporation. The presence of Sn also increased the active B dopant concentration in activating Si_(1-x-y)Ge_xSn_y to give low sheet resistance. The implantation of Sn and B followed by pulsed laser annealing could be useful for application in strain engineering of high mobility metal-oxide-semiconductor field-effect transistors.