...
首页> 外文期刊>Applied Physics Letters >Epitaxial growth and dielectric properties of Pb_(0.4)Sr_(0.6)TiO_3 thin films on (00l)-oriented metallic Li_(0.3)Ni_(0.7)O_2 coated MgO substrates
【24h】

Epitaxial growth and dielectric properties of Pb_(0.4)Sr_(0.6)TiO_3 thin films on (00l)-oriented metallic Li_(0.3)Ni_(0.7)O_2 coated MgO substrates

机译:(00l)取向金属Li_(0.3)Ni_(0.7)O_2包覆MgO衬底上Pb_(0.4)Sr_(0.6)TiO_3薄膜的外延生长和介电性能

获取原文
获取原文并翻译 | 示例

摘要

Highly (00l)-oriented Li_(0.3)Ni_(0.7)O_2 thin films have been fabricated on (001) MgO substrates by pulsed laser deposition. The Pb_(0.4)Sr_(0.6)TiO_3 (PST40) thin film deposited subsequently also shows a significant (00l)-oriented texture. Both the PST40 and Li_(0.3)Ni_(0.7)O_2 have good epitaxial behavior. The epitaxial growth of the PST40 thin film is more perfect with the Li_(0.3)Ni_(0.7)O_2 buffer layer due to the less distortion in the film. The dielectric tunability of the PST40 thin film with Li_(0.3)Ni_(0.7)O_2 buffer layer therefore reaches 70%, which is 75% higher than that without Li_(0.3)Ni_(0.7)O_2 buffer layer, and the dielectric loss of the PST40 thin film is 0.06.
机译:通过脉冲激光沉积在(001)MgO衬底上制备了高度(00l)取向的Li_(0.3)Ni_(0.7)O_2薄膜。随后沉积的Pb_(0.4)Sr_(0.6)TiO_3(PST40)薄膜也显示出明显的(00l)取向纹理。 PST40和Li_(0.3)Ni_(0.7)O_2均具有良好的外延性能。 PST40薄膜的外延生长在Li_(0.3)Ni_(0.7)O_2缓冲层中更为完美,这是因为薄膜中的变形较小。因此,具有Li_(0.3)Ni_(0.7)O_2缓冲层的PST40薄膜的介电可调性达到70%,比没有Li_(0.3)Ni_(0.7)O_2缓冲层的PST40薄膜的介电可调性高75%。 PST40薄膜为0.06。

著录项

  • 来源
    《Applied Physics Letters 》 |2007年第26期| 262901.1-262901.3| 共3页
  • 作者单位

    State Key Laboratory of Silicon Mzaterials, Zhejiang Univrsity, Hangzhou 310027, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学 ; 计量学 ;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号