Electrical study of ferromagnet-oxide-semiconductor diode for a magnetic memory device integrated on silicon

摘要

This work focuses on electrical characterization of NiFe/SiO_2/Si tunnel diodes that can be used for spin injection into silicon in future spintronic devices. Capacitance-voltage characteristics show a large increase of the Si/SiO_2 interfacial state density compared to similar Al/SiO_2/Si diodes. This result suggests that nickel and/or iron may have diffused across the SiO_2 layer. Consistently the current-voltage experimental characteristics have been modeled by using trap assisted electron transport mechanism. These traps may be attributed to ferromagnet atoms in the oxide bulk.