Two-photon passive electro-optic upconversion in a GaAs/AlGaAs heterostructure device

摘要

A semiconductor heterostructure device that requires no external power source to upconvert two low-energy photons into one higher-energy photon is proposed. This passive device is fabricated in the AlGaAs/GaAs material system and it is used to demonstrate photon upconversion from 808 to 710 nm at room temperature.