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Transparent Resistive Random Access Memory And Its Characteristics For Nonvolatile Resistive Switching

机译:透明阻性随机存取存储器及其非易失性阻变特性

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This report covers the fabrication of a fully transparent resistive random access memory (TRRAM) device based on an ITO (indium tin oxide)/ZnO/ITO capacitor structure and its resistive switching characteristics. The fabricated TRRAM has a transmittance of 81 % (including the substrate) in the visible region and an excellent switching behavior under 3 V. The retention measurement suggests that the memory property of the TRRAM device could be maintained for more than 10 years. We believe that the TRRAM device presented in this work could be a milestone of future see-through electronic devices.
机译:该报告涵盖了基于ITO(氧化铟锡)/ ZnO / ITO电容器结构的全透明电阻式随机存取存储器(TRRAM)器件的制造及其电阻切换特性。制成的TRRAM在可见光区域的透射率达到81%(包括衬底),并且在3 V电压下具有出色的开关性能。保留测量表明TRRAM器件的存储性能可以保持10年以上。我们相信,本文介绍的TRRAM设备可能是未来透明电子设备的里程碑。

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