Reduction In The Reset Current In A Resistive Random Access Memory Consisting Of Nio_x Brought About By Reducing A Parasitic Capacitance

摘要

The dependence of the relationship between the reset current I_(reset) and the compliance current I_(comp) (I_(reset)-I_(comp) characteristic) of a Pt/NiO_x/Pt structure on the parasitic capacitance between the Pt/NiO_x/Pt structure and a current limiter C was measured for I_(comp)< 1 mA. It was clarified that C deviated the I_(reset)-I_(comp) characteristic from the ideal linear relationship expected for C=0 and I_(reset) saturated at higher I_(comp) for larger C. This is attributed to a transient current flowing through C when the forming or set transitions occurred. The relationship of I_(reset)≈I_(comp) was maintained down to I_(comp)=150μA in the 1T1R cell with very small C.