Low leakage current and enhanced ferroelectric properties of Ti and Zn codoped BiFeO_3 thin film

G. D. Hu; S. H. Fan; C. H. Yang; W. B. Wu

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Low leakage current and enhanced ferroelectric properties of Ti and Zn codoped BiFeO_3 thin film

机译：Ti和Zn共掺杂的BiFeO_3薄膜的低漏电流和增强的铁电性能

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摘要

BiFeO_3 (BFO), Ti(2%)-doped BFO (BFTO), Zn(2%)-doped BFO (BFZO), as well as Ti (1%) and Zn (1 %) codoped BFO (BFTZO) films were deposited on Pt/Ti/SiO_2/Si substrates by using a metal organic decomposition process. Well saturated P-E hysteresis loops can

机译：BiFeO_3（BFO），掺Ti（2％）的BFO（BFTO），掺Zn（2％）的BFO（BFZO）以及掺Ti（1％）和Zn（1％）的BFO（BFTZO）薄膜。通过金属有机分解工艺在Pt / Ti / SiO_2 / Si衬底上沉积金属。饱和的P-E磁滞回线可以

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来源
《Applied Physicsletters》 |2008年第19期|210-212|共3页
作者
G. D. Hu; S. H. Fan; C. H. Yang; W. B. Wu;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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机译：改善了Mn和Ti共掺杂BiFeO_3薄膜的泄漏和铁电性能
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机译：Eu和Mn共掺杂BiFeO_3薄膜的漏电流降低和铁电性能提高
3. Reduced Leakage Current and Ferroelectric Properties in Nd and Mn Codoped BiFeO_3 Thin Films [J] . Takeshi Kawae, Hisashi Tsuda, Akiharu Morimoto Applied physics express . 2008,第5期

机译：Nd和Mn共掺杂BiFeO_3薄膜的漏电流和铁电性能降低
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Low leakage current and enhanced ferroelectric properties of Ti and Zn codoped BiFeO_3 thin film

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