Controlling the temperature coefficient of resistance and resistivity in RuO_2-TiO_2 thin films by the intermixing ratios between RuO_2 and TiO_2

Se-Hun Kwon; Sang-Won Kang; Kwang-Ho Kim

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Controlling the temperature coefficient of resistance and resistivity in RuO_2-TiO_2 thin films by the intermixing ratios between RuO_2 and TiO_2

机译：通过RuO_2与TiO_2的混合比控制RuO_2-TiO_2薄膜的电阻温度系数。

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The temperature coefficient of resistance (TCR) properties and resistivities, depending on the RuO_2 intermixing ratios for RuO_2-TiO_2 thin films and their thermal stability in the temperature range of 200-700 ℃, were investigated. The TCR values for the

机译：研究了RuO_2-TiO_2薄膜的RuO_2混合比及其在200〜700℃温度范围内的热稳定性，得出了电阻温度系数（TCR）特性和电阻率。 TCR值

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来源
《Applied Physicsletters》 |2008年第18期|52-54|共3页
作者
Se-Hun Kwon; Sang-Won Kang; Kwang-Ho Kim;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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Controlling the temperature coefficient of resistance and resistivity in RuO_2-TiO_2 thin films by the intermixing ratios between RuO_2 and TiO_2

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