Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film

Yong Wook Lee; Bong-Jun Kim; Jung-Wook Lim; Sun Jin Yun; Sungyoul Choi; Byung-Gyu Chae; Gyoungock Kim; Hyun-Tak Kim

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Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film

机译：二氧化钒薄膜中金属-绝缘体跃迁引起的电振荡

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In this letter, we report an observation of room temperature electrical oscillation in vanadium dioxide (VO_2), a representative strongly correlated material showing a metal-insulator transition. An electric circuit for the oscillation is simply composed

机译：在这封信中，我们报告了对二氧化钒（VO_2）的室温电振荡的观察，二氧化钒是一种典型的强相关材料，显示出金属-绝缘体的转变。构成振荡的电路简单

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来源
《Applied Physicsletters》 |2008年第16期|153-155|共3页
作者
Yong Wook Lee; Bong-Jun Kim; Jung-Wook Lim; Sun Jin Yun; Sungyoul Choi; Byung-Gyu Chae; Gyoungock Kim; Hyun-Tak Kim;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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入库时间 2022-08-18 03:20:36

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1. Electrically-driven metal-insulator transition of vanadium dioxide thin films in a metal-oxide-insulator-metal device structure [J] . Dong-Hong Qiu, Qi-Ye Wen, Qing-Hui Yang, Materials science in semiconductor processing . 2014,第Null期

机译：金属氧化物绝缘体金属器件结构中二氧化钒薄膜的电驱动金属绝缘体转变
2. High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrodes [J] . Leroy J. Applied Physics Letters . 2012,第21期

机译：纳米间隙电极上的电脉冲电压引起的二氧化钒薄膜中的高速金属-绝缘体转变
3. High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrodes [J] . J. Leroy, A. Crunteanu, A. Bessaudou, Applied Physics Letters . 2012,第21期

机译：纳米间隙电极上的电脉冲电压引起的二氧化钒薄膜中的高速金属-绝缘体转变
4. Generation of terahertz radiation in thin vanadium dioxide films undergoing metal-insulator phase transition [C] . Solyankin Petr M., Esaulkov Mikhail N., Sidorov Artem Yu, International Conference on Infrared, Millimeter, and Terahertz Waves . 2015

机译：经历金属-绝缘体相变的二氧化钒薄膜中太赫兹辐射的产生
5. Metal-insulator transitions in non-stoichiometric, chromium, and titanium doped vanadium oxide thin films. [D] . Metcalf, Patricia Ann. 2008

机译：非化学计量，铬和钛掺杂的钒氧化物薄膜中的金属-绝缘体过渡。
6. Structural and Photoelectric Properties of Epitaxially Grown Vanadium Dioxide Thin Films on c-Plane Sapphire and Titanium Dioxide [O] . Jason A. Creeden, Scott E. Madaras, Douglas B. Beringer, -1

机译：c面蓝宝石和二氧化钛上外延生长的二氧化钒薄膜的结构和光电性能
7. Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films [O] . Tadjer, Marko J., Wheeler, Virginia D., Downey, Brian P., 2016

机译：温度场和电场诱导金属 - 绝缘子转变原子层沉积二氧化钒薄膜

Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film

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