Measurements of current-voltage-induced heating in the AI/SrTiO_(3_x)N_y/AI memristor during electroformation and resistance switching

摘要

Heating of the Al/SrTiO_(3-x)N_y/Al memristor is characterized during electroformation and switching of the resistances. The electrode with the higher voltage potential is heated to higher temperatures than the electrode with the lower potential, suggesting a reversible (nonstable) displacement of the anions in a low voltage region (|V|< ±3 V). Application of a threshold voltage appropriate for resistance switching (|V|≥±3 V) facilitates migration of anions to the anode interface and increases the local anode temperature to a maximum of 285 ℃. The hysteretic I-V curves are discussed taking into account tunnel barrier formation/break and inhomogeneous Schottky barrier modification at the anode interface.