Engineering double-shifted hysteresis loops in Co/lrMn/Cu/Co films

摘要

Co(3 nm)/IrMn(15 nm)/Cu(d_(Cu))/Co(7 nm) films were subjected to magnetic annealing where its temperature and duration as well as the direction and amplitude of the applied field were varied. We demonstrate that the exchange-bias field magnitude and sign of the subloop of the bottom-pinned Co layer can be tailored in a controlled manner allowing the whole hysteresis loop to be tuned from a double negativelyegatively shifted to a double negatively/positively shifted with the shifts of the subloops in antiphase.