Blister formation in ion-implanted GaAs: Role of diffusivity

摘要

We have investigated the influence of substrate temperature during implantation, T_(implant), on blister formation in GaAs:N layers produced by N ion implantation followed by rapid thermal annealing. Similar depths of popped blisters (craters) and damage profiles were observed for both low and high T_(implant). This is in contrast to reports of T_(implant)-dependent blister formation in higher-diffusivity systems such as GaAs:H and Si:H. The apparent T_(implant)-insensitivity of blister formation in GaAs:N is likely due to the lower diffusivity of N in GaAs in comparison to that of H in GaAs and Si.