The impact of contact formation on the light emission from ambipolar transistors

摘要

In this letter the effect of the charge carrier injection on the performance of ambipolar light-emitting organic field-effect transistors will be investigated. For the analysis, the light output and spatial information of the recombination zone from different devices will be compared. The three investigated devices provide either Ohmic contacts for one or both charge carrier types or hindered injection for both. It will be demonstrated that the light emission in the different operation regimes of the transistor can be used to characterize the contact properties at source and drain.