机译:并五苯作为SiC表面上石墨烯的保护层
Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;
Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;
Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;
Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology, Pohang 790-784, Republic of Korea Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;
Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;
Department of Chemistry, Sungkyunkwan University, Suwon 440-746, Republic of Korea;
Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;
机译:Si面和C面表面上的石墨烯层以及与SiC衬底上的石墨烯生长层中的Si和C原子相互作用
机译:碳掺杂的SiC表面上掺杂Li的多层石墨烯的电荷分布
机译:石墨烯-底物相互作用对石墨烯上有机分子构型的影响:并五苯/外延石墨烯/ SiC
机译:4H-SiC(0001),(0001)和4H-SiC:H表面上物理吸附和化学吸附的单石墨烯层的密度泛函模拟
机译:单层石墨烯生长过程中Pd(111)表面台阶动力学
机译:高温处理后的纳米织构4H–SiC同质外延层的表面演变:形貌表征和石墨烯生长
机译:石墨烯 - 基底相互作用对构型的影响 石墨烯上的有机分子:并五苯/外延石墨烯/ siC