Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector

摘要

A fully silicon-based metal-oxide-semiconductor field-effect transistor is demonstrated for the detection of near-infrared light. Si nanocrystals (nc-Si) are synthesized in the nanopore channels of mesoporous silica (MS) inserted between two oxide layers to form a complete gate structure of polycrystalline Si/SiO_2c-Si-in-MS/SiO_2 with a polycrystalline Si electrode. Illuminating the gate with near-infrared light, a photoresponsivity as high as 2.8 A/W at 1.55 /μm can be achieved. The improved photoresponsivity is attributed to from optical transitions via interface states and a current amplification mechanism of the device.