Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process

摘要

We report the electrical characteristics of vertical and lateral type light emitting diodes (LEDs) grown with CrN buffer layer. The LED with CrN buffer showed lower reverse leakage current than the reference sample grown with conventional low-temperature GaN buffer. It was also observed that the density of open core screw dislocation was smaller by one order of magnitude, which was thought to relate to the leakage current of devices. The vertical type LED fabricated by chemical etching of CrN buffer showed lower series resistance, lower turn-on voltage, and larger light output power than those of the conventional LEDs.