Metal-ferroelectric (BiFeO_3(-insulator (Y_2O_3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications

摘要

Metal-ferroelectric-insulator-semiconductor capacitors and field effect transistors with Al/BiFeO_3/Y_2O_3/Si structure were fabricated and characterized for nonvolatile memory applications. The capacitance-voltage curves exhibit a maximum clockwise memory window of 0.92 V. The minimum leakage current density is 2 × 10~(-7) A/cm~2 at an applied voltage of 5 V. The capacitance-voltage memory window as a function of the sweep voltage range was investigated. The I_(DS)-V_(GS) curves of metal-ferroelectric-insulator-semiconductor transistors show a maximum memory window of 0.84 V. The drain current on/off ratio maintained more than three orders of magnitude after an elapsed time of 10~4 s.