Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio

摘要

In this study, indium tin oxide (ITO) or ITO/ZnO films, which were prepared by magnetron sputtering, were deposited onto p-GaN epitaxial films to form ultraviolet photodetectors (PDs). The ITO/ZnO/p-GaN heterojunction PDs behave like the p-i-n photodiodes, which characteristically exhibit low dark current, as opposed to the ITO/p-GaN PDs, which exhibit a marked bias-dependent dark current. The zero-bias rejection ratio can be improved up to 4 X 105 due to a further reduction in the dark current compared to the ITO/p-GaN PDs. When the incident wavelength is 360 nm, the ITO/ZnO/p-GaN heterojunction PD exhibits a zero-bias photocurrent/dark current ratio and a responsivity of approximately 8 × 10~4 and 0.015 AAV, respectively.