Modeling and measuring transient discharge current of microelectromechanical switches after dielectric charging by voltage stress

摘要

Dielectric charging effect in microelectromechanical systems has been studied using transient discharge current measurements after applying both positive and negative voltage stresses. An analytical model considering a single trap in the dielectric has been developed after the derivation of an equivalent circuit of the switch. The total amount of charge trapped can be measured and also the main parameters of the trap and dielectric layer. It is shown that the sign of the stress voltage is important in terms of the amount of charge trapped and of the trap properties.