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Tuning the permeability of permalloy films for on-chip inductor applications

机译:调整片上电感器应用坡莫合金膜的磁导率

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摘要

In this work, we demonstrate that the permeability of 1 μm thick NiFe/Cr multilayer films can be tuned by varying the thickness of individual NiFe layers while keeping the total multilayer film thickness constant. Our results show that the permeability can be increased from 170 to 650 by varying the NiFe thicknesses from 100 to 50 nm. The thickness dependant permeability variation was attributed to the presence of stripe domains, as examined by hysteresis measurements and magnetic force microscope imaging. Films with thinner NiFe layers coupled with on-chip spiral inductors enable an inductance increase by a factor of 6.
机译:在这项工作中,我们证明了可以通过改变单个NiFe层的厚度同时保持总多层膜厚度恒定来调整1μm厚的NiFe / Cr多层膜的磁导率。我们的结果表明,通过将NiFe厚度从100 nm更改为50 nm,可以将磁导率从170增加到650。通过磁滞测量和磁力显微镜成像检查,厚度依赖性磁导率变化归因于条纹区域的存在。 NiFe层较薄的薄膜加上片上螺旋电感器使电感量增加了6倍。

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  • 来源
    《Applied Physics Letters》 |2010年第16期|p.162506.1-162506.3|共3页
  • 作者单位

    School of Electrical, Computer, and Energy Engineering, Ira A. Fulton Schools of Engineering,Arizona State University, Tempe, Arizona 85287, USA;

    rnSchool of Electrical, Computer, and Energy Engineering, Ira A. Fulton Schools of Engineering,Arizona State University, Tempe, Arizona 85287, USA;

    rnSchool of Electrical, Computer, and Energy Engineering, Ira A. Fulton Schools of Engineering,Arizona State University, Tempe, Arizona 85287, USA;

    rnSchool of Electrical, Computer, and Energy Engineering, Ira A. Fulton Schools of Engineering,Arizona State University, Tempe, Arizona 85287, USA;

    rnSchool of Electrical, Computer, and Energy Engineering, Ira A. Fulton Schools of Engineering,Arizona State University, Tempe, Arizona 85287, USA;

    rnSchool of Electrical, Computer, and Energy Engineering, Ira A. Fulton Schools of Engineering,Arizona State University, Tempe, Arizona 85287, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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