Localized ultraviolet photoresponse in single bent ZnO microanowires

摘要

The localized ultraviolet photoresponse in single bent ZnO microanowires bridging two Ohmic contacts has been investigated. The ZnO microanowire has a higher photoresponse sensitivity of about 190% at the bent region (bending strain: about 4%) than that at the straight region (about 50%). The rise and decay time constants are almost the same in the straight and bent regions of the ZnO microanowire. A possible mechanism has been proposed and discussed. The bent ZnO microanowires could be potentially useful for fabricating the coupled piezoelectric and optoelectronic nanodevices.