Three-Dimensional K ? P Real-Space Quantum Transport Simulations Of P-Type Nanowire Transistors: Influence Of Ionized Impurities

摘要

We present a three-dimensional quantum transport simulator for p-type nanowire transistors. This self-consistent model expresses a six-band kp Hamiltonian within the non-equilibrium Green's function formalism. Transport properties are analyzed with and without the presence of ionized impurities in the channel. We observe that inter-subband coupling generates a rich structure of peaks in the transmission coefficients even in the intrinsic situation. A single donor leads to a current decrease whereas its acceptor counterpart induces complicated resonant and anti-resonant features. Unlike n-type devices, our conclusions pinpoint that the p-type nanowire transistors exhibit intricate transmission variations that can potentially generate larger variability and whose modeling requires a multi-band based simulator.