Effects of ferroelectric dead layer on the electron transport in ferroelectric tunneling junctions

摘要

Ferroelectric dead layer is intrinsic and inevitable at the metal-ferroelectrics interface. In general, it is detrimental to the application of nanoscale devices; however, in ferroelectric tunneling junctions with ferroelectric dead layer, an enhanced tunneling electroresistance (TER) can be achieved when the nonswitchable interface polarization at both metal-ferroelectrics interfaces points to the ferroelectric center. The larger the interface polarization, the stronger the TER. In addition, low dielectric constant of dead layer will favor such enhancement. Our results provide an alternative route for achieving larger TER in ferroelectric junctions.