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Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system

机译:InAs量子线中的准二维电子系统中近红外辐射引起的圆形光电流效应

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摘要

In this letter we investigated the InAs/InAlAs quantum wires (QWRs) superlattice by optically exciting the structure with near-infrared radiation. By varying the helicity of the radiation at room temperature we observed the circular photogalvanic effect related to the C_(2v) symmetry of the structure, which could be attributed to the formation of a quasi-two-dimensional system underlying in the vicinity of the QWRs pattern. The ratio of Rashba and Dresselhaus terms shows an evolution of the spin-orbit interaction in quasi-two-dimensional structure with the QWR layer deposition thickness.
机译:在这封信中,我们通过用近红外辐射光激发结构来研究InAs / InAlAs量子线(QWR)超晶格。通过改变室温下辐射的螺旋度,我们观察到与结构的C_(2v)对称性有关的圆形光电动效应,这可能归因于在QWR附近形成的准二维系统的形成。图案。 Rashba和Dresselhaus项的比率显示了准二维结构中自旋轨道相互作用随QWR层沉积厚度的演变。

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  • 来源
    《Applied Physics Letters》 |2011年第23期|p.232116.1-232116.3|共3页
  • 作者单位

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, People's Republic of China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, People's Republic of China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, People's Republic of China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, People's Republic of China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 03:18:02

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