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Electrical transport properties of (110)-oriented PrBa_2(Cu_(0.8)Ga_(0.2))_3O_7thin films

机译:(110)取向PrBa_2(Cu_(0.8)Ga_(0.2))_ 3O_7薄膜的电输运性质

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摘要

The electrical transport properties of (110)-oriented PrBa_2(Cu_(0.8)Ga_(0.2))_3O_7 (PBCGO) thin films have been investigated. The electrical resistivity, ρ(T), of (110)-oriented PBCGO thin films is 8.91 × 10~5 Ω-cm at 77 K, about five orders of magnitude higher than that of the (110)-oriented PrBa_2Cu_3O_7 thin films and follows Mott's T~(-1/4) law up to room temperature. Our experimental results suggest filling and localization of holes in Cu-O chains of (110)-oriented PBCGO thin films. We observed very less proximity effect on YBa_2Cu_3O_7 (YBCO)/PBCGO multilayers indicating that the (110)-oriented PBCGO thin films may serve as effective insulators in YBCO SIS tunneling Josephson junction.
机译:研究了(110)取向的PrBa_2(Cu_(0.8)Ga_(0.2))_ 3O_7(PBCGO)薄膜的电传输性能。 (110)取向的PBCGO薄膜在77 K时的电阻率ρ(T)为8.91×10〜5Ω-cm,比(110)取向的PrBa_2Cu_3O_7薄膜的电阻率ρ(T)高出五个数量级。在室温下,遵循莫特的T〜(-1/4)定律。我们的实验结果表明(110)取向的PBCGO薄膜的Cu-O链中的孔的填充和定位。我们观察到对YBa_2Cu_3O_7(YBCO)/ PBCGO多层膜的接近效应很小,这表明(110)取向的PBCGO薄膜可以作为YBCO SIS隧道约瑟夫森结的有效绝缘体。

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  • 来源
    《Applied Physics Letters》 |2012年第25期|p.252601.1-252601.4|共4页
  • 作者单位

    National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA;

    Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, Arkansas 72204, USA;

    Nanotechnology Center, University of Arkansas at Little Rock, Little Rock, Arkansas 72204, USA;

    Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, USA;

    Nanotechnology Center, University of Arkansas at Little Rock, Little Rock, Arkansas 72204, USA;

    Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, Arkansas 72204, USA;

    Department of Chemistry, University of Arkansas at Little Rock, Little Rock, Arkansas 72204, USA;

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  • 正文语种 eng
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