Electrically pumped wavelength-tunable blue random lasing from CdZnO films on silicon

摘要

Electrically pumped lasing actions from the metastable CdZnO films have hardly been achieved as yet. Herein, we have demonstrated electrically pumped wavelength-tunable blue random lasing from the hexagonal CdZnO films with different Cd contents, with central wavelength changing from ～490 to 425 run. The devices based on the metal-insulator-semiconductor structures of Au/SiO_2/CdZnO on silicon substrates are constructed for electrical pumping of the CdZnO films. The insulator layers of SiO_2 onto the CdZnO films in the devices should be annealed at sufficiently low temperature such as 400 ℃ so that the CdZnO films can be kept their integrity in terms of near-band-edge emissions.