Electrical stabilities and memory mechanisms of organic bistable devices fabricated utilizing a poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) layer with a poly(methyl methacrylate) buffer layer

摘要

Organic bistable devices (OBDs) based on a poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) layer with a poly(methyl methacrylate) (PMMA) buffer layer were fabricated on indium-tin-oxide (ITO)-coated polyethylene terephthalate (PET) flexible substrates. Current-voltage curves for, the AI/PEDOT:PSS/PMMA/ITO/PET device showed current bistabilities with an ON/OFF current ratio of 1 × 10~3, indicative of a significant enhancement of memory storage. The endurance number of the ON/OFF switchings for the OBDs was above 1 × 10~5 cycles showing high potential applications in read only memory devices. The memory mechanisms for the OBDs on the basis of oxidation and reduction operations were attributed to the filament processes.