Detection of sulfur dioxide gas with graphene field effect transistor

摘要

Graphene grown by chemical vapor deposition on a Cu foil and transferred onto a Si wafer has been used to fabricate a field effect transistor device that was used to study the sensing of SO_2 gas. It was found by in-situ measurements that the SO_2 strongly p-dopes the graphene and dramatically shifts its Dirac point. This effect was used to monitor the SO_2 gas. The detector can be completely reset by thermal annealing at 100 ℃ in high vacuum. The response and recovery of the detector are faster at higher temperatures. Moreover, the sensitivity of the SO_2 graphene detector increases, proportionally with increasing temperature.