Spontaneous emission control of single quantum dots in bottom-up nanowire waveguides

摘要

Nanowire waveguides with controlled shape are promising for engineering the collection efficiency of quantum light sources. We investigate the exciton lifetime in individual InAsP quantum dots, perfectly positioned on-axis of InP nanowire waveguides. We demonstrate control over the quantum dot spontaneous emission by varying the nanowire diameter in e-beam patterned arrays, which modifies the coupling efficiency of the emitter to the fundamental waveguide mode. The spontaneous emission rate is inhibited by a factor of 12 in thin nanowires compared to nanowires with optimized waveguide diameter. From the measured inhibition factor, we determine a high radiative yield exceeding 92% in bottom-up grown nanowires.