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Multiple Andreev reflection in MgB_2/MgO/MgB_2 Josephson junctions

机译:MgB_2 / MgO / MgB_2约瑟夫森结中的多次安德列夫反射

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摘要

The current-voltage and conductance-voltage characteristics of MgB_2/MgO/MgB_2 junctions made with MgB_2 electrodes grown by hybrid physical-chemical vapor deposition were systematically analyzed. In the junctions with different sizes and critical current densities, we found excess current and subharmonic gap structure indicative of multiple Andreev reflection. An apparent link between multiple Andreev reflection and substantial Josephson current at high temperatures suggests that the barrier is dominated by high-transparency channels.
机译:系统分析了混合物理化学气相沉积法制备的MgB_2电极形成的MgB_2 / MgO / MgB_2结的电流-电压和电导-电压特性。在具有不同尺寸和临界电流密度的结中,我们发现了多余的电流和次谐波间隙结构,表明存在多次安德列夫反射。在高温下多次安德列夫反射和大量约瑟夫森电流之间的明显联系表明,该障碍由高透明通道主导。

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  • 来源
    《Applied Physics Letters》 |2012年第12期|p.122601.1-122601.4|共4页
  • 作者单位

    Department of Physics, Temple University, Philadelphia, Pennsylvania 19122, USA;

    Department of Physics, Temple University, Philadelphia, Pennsylvania 19122, USA;

    Department of Physics, Temple University, Philadelphia, Pennsylvania 19122, USA;

    Department of Physics, Temple University, Philadelphia, Pennsylvania 19122, USA;

    Jet Propulsion Laboratory, Pasadena, California 91109, USA;

    Department of Chemical and Materials Engineering, Arizona State University, Tempe, Arizona 85287, USA;

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  • 正文语种 eng
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