Growth and characterization of hybrid insulating ferromagnet-topological insulator heterostructure devices

摘要

We report the integration of the insulating ferromagnet GdN with epitaxial films of the topological insulator Bi_2Se_3 and present detailed structural, magnetic, and transport characterization of the heterostructures. Fabrication of multi-channel Hall bars with bare and GdN-capped sections enable direct comparison of magnetotransport properties. We show that the presence of the magnetic overlayer results in suppression of weak anti-localization at the top surface.