Intense green-yellow electroluminescence from Tb~+-implanted silicon-rich silicon nitride/oxide light emitting devices

摘要

High optical power density of 0.5 mW/cm~2, external quantum efficiency of 0.1%, and population inversion of 7% are reported from Tb~+-implanted silicon-rich silicon nitride/oxide light emitting devices. Electrical and electroluminescence mechanisms in these devices were investigated. The excitation cross section for the 543 nm Tb~(3+) emission was estimated under electrical pumping, resulting in a value of 8.2 × 10~(-14) cm~2, which is one order of magnitude larger than one reported for Tb~(3+):Si0_2 light emitting devices. These results demonstrate the potentiality of Tb~+-implanted silicon nitride material for the development of integrated light sources compatible with Si technology.