Evidence of spin scattering and collection of hot electrons at different conduction minima in Si

摘要

We observe unusual features in the bias dependence of spin transport in a Co/Au/NiFe spin valve fabricated on a highly textured Cu(100)/Si(100) Schottky interface, exploiting the local probing capabilities of a Ballistic electron magnetic microscope. This is ascribed to local differences in strain and the presence of misfit dislocations at the Schottky interface that enhances spin flip scattering and broaden the energy and angular distribution of the transmitted electrons. Cumulatively, these enable the transmitted hot electrons to probe the different conduction band minima in Si, giving rise to such bias dependent features in the magnetocurrent.