Fabrication of stretchable MoS_2 thin-film transistors using elastic ion-gel gate dielectrics

摘要

We fabricated stretchable molybdenum disulfide thin-film transistors (MoS_2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm~2/(V-s) and an on/off current ratio of 10~4 with a notably low threshold voltage (~1V). Furthermore, our MoS_2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using M0S2 films for stretchable electronics.