Mechanical stress influence on electronic transport in low-k SiOC dielectric single damascene capacitor

摘要

We fabricate a SiOC comb structure capacitor device, and apply mechanical stress into samples by bending. From Ⅰ-Ⅴ fitting, we obtain the energy barrier lowering β, and conclude that the electron transport in single damascene capacitor is due to Poole-Frenkel emission. Tension yields a decrease of energy barrier in the single damascene dielectric layer and an increase of leakage current compared to the unstressed sample. In contrast, compression stress yields the energy barrier increase and the leakage current decrease. The variation of leakage current is originated from the energy barrier change induced by mechanical stress.