Probing hot electron transport across an epitaxial Schottky interface of SrRuO_3/Nb:SrTiO_3

摘要

SrRuO_3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO_3. Oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO_3 (Nb:STO). Using a three-terminal device configuration, we study vertical transport in a SRO/Nb:STO device at the nanoscale and find local differences in transport which originate due to the high selectivity of SRO growth on the underlying surface terminations in Nb:STO. This causes a change in the interface energy band characteristics and is explained by the differences in the spatial distribution of the interface-dipoles at the local Schottky interface.