机译:Si p-n结的应变感应电特性调制的比较研究
School of Electronic Science and Engineering, Nanjing University, No. 22 Hankou Rd., Nanjing 210093, People's Republic of China;
IBM Research - LaboratoryZurich, Saeumerstrasse 4, CH-8803 Rueschlikon, Switzerland;
School of Electronic Science and Engineering, Nanjing University, No. 22 Hankou Rd., Nanjing 210093, People's Republic of China;
Shanghai Hua Hong NEC Electronics Company Limited, No. 1188 Chuanqiao Rd., Shanghai 201206,People' s Republic of China;
School of Electronic Science and Engineering, Nanjing University, No. 22 Hankou Rd., Nanjing 210093, People's Republic of China;
School of Electronic Science and Engineering, Nanjing University, No. 22 Hankou Rd., Nanjing 210093, People's Republic of China;
School of Electronic Science and Engineering, Nanjing University, No. 22 Hankou Rd., Nanjing 210093, People's Republic of China;
School of Electronic Science and Engineering, Nanjing University, No. 22 Hankou Rd., Nanjing 210093, People's Republic of China;
机译:Si p-n结的应变感应电特性调制的比较研究
机译:加热对/ CdTe / Au X和γ射线检测器的电和光谱性能与肖特基势垒或激光诱导的P-N结的影响
机译:HgCdTe中As离子注入的势垒层诱导沟道效应及其对p-n结电学性质的影响
机译:Si CMOS器件中p-n结和MOS电容器的应变感应I-V特性调制
机译:在宏观和纳米尺度上比较金属-单层-半导体结的电性能。
机译:与伴刀豆球蛋白A诱导的凝集有关的表面性质。几种Entamoeba菌株的比较研究
机译:扩散法制备的InSb p-n结的电学性质
机译:离子注入砷化镓形成p-n结的电学特性研究