The demonstration of colossal magneto-capacitance effect with the promising gate stack characteristics on Ge (100) by the magnetic gate stack design

摘要

The tetragonal-phase BaTiO_3 as the high dielectric (HK) layer and the magnetic FePt film as the metal gate (MG) are proposed to be the gate stack scheme on the Ge (100) substrate. The ～75% dielectric constant (κ-value) improvement, ～100X gate leakage (Jg) reduction, and the promising Jg-equivalent-oxide-thickness (EOT) gate stack characteristics are achieved in this work with the colossal magneto-capacitance effect. The perpendicular magnetic field from the magnetic FePt MG film couples and triggers the more dipoles in the BaTiO_3 HK layer and then results in the super gate capacitance (C_(gate)) and κ-value. Super Jg-EOT gate stack characteristics with the magnetic gate stack design on the high mobility (Ge) substrate demonstrated in this work provides the useful solution for the future low power mobile device design.