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首页> 外文期刊>Applied Physics Letters >Benzocyclobutene barrier layer for suppressing conductance in nonlinear optical devices during electric field poling
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Benzocyclobutene barrier layer for suppressing conductance in nonlinear optical devices during electric field poling

机译：用于抑制电场极化过程中非线性光学器件电导的苯环丁烯阻挡层

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摘要

We measured the electro-optic (EO) coefficients (r_(33)) of thin-film devices made from several monolithic, high number density organic EO chromophores with and without additional charge barrier layers. We found that a cross-linkable benzocyclobutene layer was very effective in suppressing unwanted, leakage current, keeping the effective poling voltage nearly identical to the applied voltage. This barrier layer proved to be superior to a titanium dioxide (TiO_2) barrier layer. The suppression of the leakage current in combination with a new chromophore enabled the construction of EO devices that had r_(33) values in the range of 400-500 pm V~(-1) with poling fields ＞ 85 V μm~(-1).
机译：我们测量了由具有和不具有额外电荷阻挡层的数个整体式，高密度电子有机发色团制成的薄膜器件的电光（EO）系数（r_（33））。我们发现，可交联的苯并环丁烯层在抑制不想要的泄漏电流方面非常有效，使有效极化电压几乎与施加的电压相同。事实证明，该阻挡层优于二氧化钛（TiO_2）阻挡层。通过结合使用新的生色团来抑制泄漏电流，使得能够构建具有r_（33）值在400-500 pm V〜（-1）范围内且极化场＞ 85 Vμm〜（-1）的EO设备。 ）。

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  • 来源
    《Applied Physics Letters 》 |2014年第24期| 243304.1-243304.5| 共5页
  • 作者

    Wenwei Jin; Peter V. Johnston; Delwin L. Elder; Andreas F. Tillack; Benjamin C. Olbricht; Jinsheng Song; Philip J. Reid; Ruimin Xu; Bruce H. Robinson; Larry R. Dalton;

  • 作者单位

    Department of Chemistry, University of Washington, Box 351700, Seattle, Washington 98195, USA,EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China;

    Department of Chemistry, University of Washington, Box 351700, Seattle, Washington 98195, USA;

    Department of Chemistry, University of Washington, Box 351700, Seattle, Washington 98195, USA;

    Department of Chemistry, University of Washington, Box 351700, Seattle, Washington 98195, USA;

    Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716, USA;

    Department of Chemistry, University of Washington, Box 351700, Seattle, Washington 98195, USA,Key Laboratory for Special Functional Materials, Henan University, Kaifeng 475004, People's Republic of China;

    Department of Chemistry, University of Washington, Box 351700, Seattle, Washington 98195, USA;

    EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China;

    Department of Chemistry, University of Washington, Box 351700, Seattle, Washington 98195, USA;

    Department of Chemistry, University of Washington, Box 351700, Seattle, Washington 98195, USA;

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