Tunable spectral response by hydrogen irradiation of Ga(AsN) superlattice diodes

摘要

We report on the tuning of the spectral response of superlattice (SL) diodes based on dilute nitride Ga(AsN) alloys by post-growth hydrogenation. Hydrogen is incorporated into the superlattice where it neutralizes the electronic activity of nitrogen by forming N-H complexes. We exploit the controlled thermal dissociation of the complexes to tune the energy of the SL photocurrent absorption and electroluminescence emission; also, by annealing a submicron spot with a focused laser beam we create a preferential path for the injection of carriers, thus activating a nanoscale light emitting region. This method can be used for fabricating planar diode arrays with distinct optical active regions, all integrated onto a single substrate.