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Thickness-dependent white electroluminescence from diamond/CeF_3/SiO_2 multilayered films

机译:金刚石/ CeF_3 / SiO_2多层膜的厚度依赖性白色电致发光

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摘要

Diamond/CeF_3/SiO_2 multilayered films electroluminescent (EL) devices were made, and we found that the EL spectrum at room temperature depends on the CeF_3 layer thickness. The EL spectrum shows that the main peaks are located at 527 nm, 593 nm, and 742 nm when the CeF_3 layer thickness is less than 0.5 μm, but when the CeF_3 layer thickness is greater than 0.5 μm, the electroluminescence spectrum obviously exhibits three bands, which are centered at 310-380 nm (ultraviolet emission), 520-580 nm (green-yellow emission), and 700-735 nm (red emission). The white EL brightness of the device (for thicker CeF_3 layer) reaches a maximum of 15cd/m~2 at a forward applied voltage of 225 V, which can be distinguished at the sunlight in the light by the naked eye.
机译:制备了Diamond / CeF_3 / SiO_2多层膜电致发光(EL)器件,我们发现室温下的EL光谱取决于CeF_3层的厚度。 EL光谱表明,当CeF_3层厚度小于0.5μm时,主峰位于527 nm,593 nm和742 nm处,但是当CeF_3层厚度大于0.5μm时,电致发光光谱明显呈现出三个谱带的中心位于310-380 nm(紫外线发射),520-580 nm(绿黄色发射)和700-735 nm(红色发射)。器件的白色EL亮度(用于CeF_3较厚的层)在225 V的正向施加电压下达到最大值15cd / m〜2,这可以通过肉眼在阳光下辨别出来。

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  • 来源
    《Applied Physics Letters》 |2014年第12期|121110.1-121110.4|共4页
  • 作者单位

    College of Science, University of Shanghai for Science and Technology, Shanghai 200093, China;

    School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;

    College of Science, University of Shanghai for Science and Technology, Shanghai 200093, China;

    College of Science, University of Shanghai for Science and Technology, Shanghai 200093, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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  • 入库时间 2022-08-18 03:15:47

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