Single-charge detection by an atomic precision tunnel junction

摘要

We demonstrate sensitive detection of single charges using a planar tunnel junction 8.5 nm wide and 17.2 nm long defined by an atomically precise phosphorus doping profile in silicon. The conductance of the junction responds to a nearby gate potential and also to changes in the charge state of a quantum dot patterned 52 nm away. The response of this detector is monotonic across the entire working voltage range of the device, which will make it particularly useful for studying systems of multiple quantum dots. The charge sensitivity is maximized when the junction is most conductive, suggesting that more sensitive detection can be achieved by shortening the length of the junction to increase its conductance.