Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

摘要

The orientation dependence of the piezoresistive effect of p-type single crystalline 3C-SiC thin film grown on a (100)Si wafer was characterized. The longitudinal, transverse gauge factors in [100] orientation, and longitudinal gauge factor in [110] orientation were found to be 5.8, -5.2, and 30.3, respectively. The fundamental piezoresistive coefficients π_(11), π_(12), and π_(44) of p-type 3C-SiC were obtained to be 1.5 × 10~(-11)Pa~(-1), -1.4 × 10~(-11)Pa~(-1), and 18.1 × 10~(-11) Pa~(-1), respectively. From these coefficients, the piezoresistive effect in any crystallographic orientation in p-type single crystalline 3C-SiC can be estimated, which is very valuable in designing micro-mechanical sensors.