机译:二氧化钛的隧道势垒工程,可实现无选择器电阻式随机存取存储器的高非线性
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, South Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, South Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, South Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, South Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, South Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, South Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, South Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, South Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, South Korea;
机译:具有隧道势垒的基于Si_3N_4的电阻切换随机存取存储单元的电阻切换特性,适用于高密度集成和低功耗应用
机译:使用富含TiN的TiN电极的基于选择器少的Ta_2O_5的电阻型随机存取存储器的低功耗和改进的开关特性
机译:基于两晶体管双磁隧道结单元的嵌入式自旋转移转矩磁阻随机存取存储器的氧化物隧道势垒击穿的长期可靠的物理不可克隆函数
机译:TiO
机译:价缺陷的氧化物缺陷工程方法(VCM)电阻性随机存取存储器。
机译:多功能隧道势垒内部电阻器用于电阻式随机存取存储器中的选择性和开关均匀性
机译:氧化钛隧道屏障工程,用于较轻的选择器电阻随机存取存储器的高非线性
机译:原子层沉积(aLD) - 沉积二氧化钛(TiO2)厚度对Zr40Cu35al15Ni10(ZCaN)/ TiO2 /铟(In)基电阻随机存取存储器(RRam)结构性能的影响。