InAs-based metal-oxide-semiconductor structure formation in low-energy Townsend discharge

摘要

We developed and applied a method of InAs passivation in the low-energy plasma of Townsend discharge. The controlled interface oxidation in the Ar:O_2:CF_4 gas mixture under visualization of gas discharge plasma allowed growing thin homogeneous films in the range of 5-15 nm thickness. Oxidation with the addition of CF_4 in gas-discharge plasma led to the formation of In and As oxyfluorides with a wide insulating gap and isostructural interface with unpinned Fermi level behavior. The metal-oxide-semiconductor structure showed excellent capacitance-voltage characteristics: small frequency dispersion (＜15 mV), density of interface states (D_(it) in the gap below 5 x 10~(10)eV~(-1)cm~(-2), and fixed charge (Q_(fix)) below 5 x 10~(11)cm~(-2).