Probing carrier dynamics of individual layers in a heterostructure using transient reflectivity

摘要

We report the wavelength dependent transient reflectivity measurements in AlGaAs-GaAs hetero-structures having two-dimensional electron (or hole) gas near the interface. Using a multilayer model for transient reflectivity, we show that the magnitude and sign of contributions from the carriers in two-dimensional electron (or hole) gas and GaAs to the total signal depends on the wavelength. Further, it has been shown that it is possible to study the carrier dynamics in a given layer of a heterostructure by performing transient reflectivity at specific wavelengths.