机译:偏置增强的后处理工艺,可增强超纳米晶金刚石膜的电子场发射性能
Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;
Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan;
Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan;
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan;
Department of Physics, Tamkang University, Tamsui 251, Taiwan;
机译:等离子体后处理工艺可增强超纳米晶金刚石膜的电子场发射性能
机译:石墨丝的起源对改善CH
机译:石墨细丝起源于改善CH_4 / Ar等离子体中负偏压增强的超纳米晶金刚石薄膜的电子场发射性能
机译:通过涂覆超纳米晶金刚石膜增强碳纳米管电子场发射行为的稳定性
机译:通过等离子合成的金刚石和相关薄膜的场电子发射增强了化学气相沉积。
机译:银离子注入/退火后的超纳米晶金刚石薄膜增强电子发射的纳米尺度研究
机译:纳米级对银离子植入/后退火后超混合金刚石薄膜增强电子场发射的研究