Thermoelectric power of bulk black-phosphorus

摘要

The potential of bulk black-phosphorus, a layered semiconducting material with a direct band gap of ～0.3eV, for thermoelectric applications has been experimentally studied. The Seebeck Coefficient (S) has been measured in the temperature range from 300 K to 385 K, finding a value of S = +335 ± 10 μV/K at room temperature (indicating a naturally occurring p-type conductivity). S increases with temperature, as expected for p-type semiconductors, which can be attributed to an increase of the charge carrier density. The electrical resistance drops up to a 40% while heating in the studied temperature range. As a consequence, the power factor at 385 K is 2.7 times higher than that at room temperature. This work indicates the prospective use of black-phosphorus in thermo-electric applications such as thermal energy scavenging, which typically require devices with high performance at temperatures near room temperature.