Molecular floating-gate organic nonvolatile memory with a fully solution processed core architecture

摘要

In this paper, we demonstrated a floating-gate organic thin film transistor based nonvolatile memory, in which the core architecture was processed by a sequential three-step solution spin-coating method. The molecular semiconductor 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-Pen) distributing in the matrix of polymer poly(styrene) (PS), acting as the floating-gate and tunneling layer, respectively, was processed by one-step spin-coating from their blending solution. The effect of the proportion of TIPS-Pen in the matrix of PS on the memory performances of devices was researched. As a result, a good nonvolatile memory was achieved, with a memory window larger than 25 V, stable memory endurance property over 500 cycles and retention time longer than 5000 s with a high memory ratio larger than 102, at an optimal proportion of TIPS-Pen in the matrix of PS.